| 摘要 |
950,592. Semi-conductor devices. TELEFUNKEN A.G. Feb. 19, 1960 [Feb. 19, 1959], No. 5882/60. Heading H1K. A semi-conductor diode or transistor has an insulating envelope coated with a conductive material which is conductively coupled to one of the electrodes of the device, e.g., in the case of a transistor, the base electrode. The conductive coating may be on the inside or the outside surface of the envelope, and may be opaque. As described, static charges on the surface of a semi-conductor body in such a device are removed by heating the semi-conductor or by bombarding it with charge carriers of sign opposite from that of the static charges. In one example, a semi-conductor device in a hermetically sealed envelope is heated at 100- 120‹ C. for 1-2 hours. In another example a similar device comprising a semi-conductor having positive static charges is bombarded with #-rays. The conductive coating of the envelope is said to inhibit the formation of further static charges. |
