| 发明名称 |
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME |
| 摘要 |
A method of manufacturing a semiconductor device may include: forming an interlayer insulating layer having openings on a substrate; forming a metal layer in the openings and on the interlayer insulating layer, the metal layer including a sidewall portion on a sidewall of each of the openings and a bottom portion on a bottom surface of each of the openings, wherein the bottom portion is thicker than the sidewall portion; reflowing the metal layer to form metal patterns in the openings, the metal patterns having top surfaces at a level lower than a topmost surface of the interlayer insulating layer; and/or forming capping patterns covering the metal patterns in the openings. |
| 申请公布号 |
US2015115398(A1) |
申请公布日期 |
2015.04.30 |
| 申请号 |
US201414453310 |
申请日期 |
2014.08.06 |
| 申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
LEE Euibok;BAEK Jongmin;KIM Dohyoung;MATSUDA Tsukasa;CHO Youngwoo;HONG Jongseo |
| 分类号 |
H01L21/768;H01L21/764;H01L21/762;H01L21/02 |
主分类号 |
H01L21/768 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of manufacturing a semiconductor device, the method comprising:
forming an interlayer insulating layer having openings on a substrate; forming a metal layer in the openings and on the interlayer insulating layer, the metal layer including a sidewall portion on a sidewall of each of the openings and a bottom portion on a bottom surface of each of the openings, wherein the bottom portion is thicker than the sidewall portion; reflowing the metal layer to form metal patterns in the openings, the metal patterns having top surfaces at a level lower than a topmost surface of the interlayer insulating layer; and forming capping patterns covering the metal patterns in the openings. |
| 地址 |
Suwon-Si KR |
