| 发明名称 |
OXIDE DEFINITION (OD) GRADIENT REDUCED SEMICONDUCTOR DEVICE AND METHOD OF MAKING |
| 摘要 |
A method of reducing an oxide definition (OD) density gradient in an integrated circuit (IC) semiconductor device having a placed layout and a set of design rule checking (DRC) rules associated with the placed layout. The method includes computing OD density in insertion regions from OD density information corresponding to the placed layout to identify an OD density gradient. The method further includes selecting and adding dummy cells to at least one insertion region to reduce the OD density gradient. |
| 申请公布号 |
US2015115395(A1) |
申请公布日期 |
2015.04.30 |
| 申请号 |
US201314068213 |
申请日期 |
2013.10.31 |
| 申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
CHUANG Yi-Lin;KU Chun-Cheng;CHIEN Chin-Her;CHANGCHIEN Wei-Pin |
| 分类号 |
H01L29/06;G06F17/50 |
主分类号 |
H01L29/06 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method, comprising:
providing a design of an integrated circuit (IC) semiconductor device having a placed layout and a set of design rule checker (DRC) rules associated with the placed layout; computing OD density in insertion regions from OD density information corresponding to the placed layout to identify an OD density gradient; and selecting and adding dummy cells to at least one insertion region to reduce the OD density gradient. |
| 地址 |
Hsinchu TW |
