SOLID-STATE IMAGING DEVICE AND MANUFACTURING METHOD OF SOLID-STATE IMAGING DEVICE

摘要

A solid-state imaging device includes a plurality of photoelectric transducers disposed in an array in a semiconductor layer. Each photoelectric transducer includes a first semiconductor region of a first conductivity type and a second semiconductor region of a second conductivity type. The first and second regions are in direct contact. An isolation region is between each adjacent pair of photoelectric transducers. The isolation region includes an insulating material extending from a surface of the semiconductor layer and a third semiconductor region of the first conductivity type surrounding the insulating material. The third semiconductor region is between the insulating material and the first semiconductor region, and the first semiconductor region is between the second and third semiconductor regions.

主权项

1. A solid-state imaging device, comprising:
a plurality of photoelectric transducers in an array within a semiconductor layer, each photoelectric transducer including a first semiconductor region of a first conductivity type and a second semiconductor region of a second conductivity type, the first and second semiconductor regions being in direct contact with each other; and an isolation region between each adjacent pair of photoelectric transducers in the plurality of photoelectric transducers, the isolation region comprising an insulating material extending from a surface of the semiconductor layer into the semiconductor layer and a third semiconductor region of the first conductivity type surrounding the insulating material, wherein the third semiconductor region is between the insulating material and the first semiconductor region, and the first semiconductor region is between the second and third semiconductor regions.