CO-INTEGRATION OF ELEMENTAL SEMICONDUCTOR DEVICES AND COMPOUND SEMICONDUCTOR DEVICES

摘要

First and second template epitaxial semiconductor material portions including different semiconductor materials are formed within a dielectric template material layer on a single crystalline substrate. Heteroepitaxy is performed to form first and second epitaxial semiconductor portions on the first and second template epitaxial semiconductor material portions, respectively. At least one dielectric bonding material layer is deposited, and a handle substrate is bonded to the at least one dielectric bonding material layer. The single crystalline substrate, the dielectric template material layer, and the first and second template epitaxial semiconductor material portions are subsequently removed. Elemental semiconductor devices and compound semiconductor devices can be formed on the first and second semiconductor portions, which are embedded within the at least one dielectric bonding material layer on the handle substrate.

主权项

1. A semiconductor structure comprising
at least one dielectric bonding material layer located on a handle substrate; and a first epitaxial semiconductor portion and a second epitaxial semiconductor portion, wherein one of said first and second epitaxial semiconductor portions comprises a single crystalline elemental semiconductor material, and another of said first and second epitaxial semiconductor portions comprises a single crystalline compound semiconductor material, wherein said at least one dielectric bonding material layer comprises: a first dielectric bonding material layer not contacting said first and second epitaxial semiconductor portions; and a second dielectric bonding material layer underlying all of said first dielectric bonding material layer and contacting said first epitaxial semiconductor portion.