GROUP III NITRIDE SEMICONDUCTOR DEVICE, AND METHOD FOR FABRICATING GROUP III NITRIDE SEMICONDUCTOR DEVICE

摘要

In a group III nitride semiconductor device according to one aspect of the present invention, in a p-type group III nitride semiconductor region formed on a semi-polar plane substrate, the concentration of hydrogen (H) contained in the p-type group III nitride semiconductor region is 25% or less of the concentration of a p-type dopant therein, and the concentration of oxygen contained in the p-type group III nitride semiconductor region is 5×1017 atoms/cm3 or lower, and an angle between a normal axis of a primary surface of the semi-polar plane substrate and a c-axis of the semi-polar plane substrate is not lower than 45 degrees and not higher than 80 degrees or not lower than 100 degrees and not higher than 135 degrees in a waveguide axis direction of the group III nitride semiconductor device.

主权项

1. A group III nitride semiconductor device, comprising a p-type group III nitride semiconductor region, a concentration of hydrogen (H) contained in the p-type group III nitride semiconductor region being 25% or less of the concentration of a p-type dopant therein, and a concentration of oxygen contained in the p-type group III nitride semiconductor region being 5×1017 atoms/cc or lower, and an angle between a normal axis of a primary surface of the semi-polar plane substrate and a c-axis of a semi-polar plane substrate being not lower than 45 degrees and not higher than 80 degrees or not lower than 100 degrees and not higher than 135 degrees in a waveguide axis direction of the group III nitride semiconductor device.