| 发明名称 |
Semiconductor Device Having a Corrosion-Resistant Metallization and Method for Manufacturing Thereof |
| 摘要 |
A semiconductor device includes a semiconductor substrate having a first side, a second side opposite the first side, an active area, an outer rim, and an edge termination area arranged between the outer rim and the active area. A metallization structure is arranged on the first side of the semiconductor substrate and comprising at least a first metal layer comprised of a first metallic material and a second metal layer comprised of a second metallic material, wherein the first metallic material is electrochemically more stable than the second metallic material. The first metal layer extends laterally further towards the outer rim than the second metal layer. |
| 申请公布号 |
US2015115449(A1) |
申请公布日期 |
2015.04.30 |
| 申请号 |
US201314068398 |
申请日期 |
2013.10.31 |
| 申请人 |
Infineon Technologies AG |
发明人 |
Schäffer Carsten;Humbel Oliver;Plappert Mathias;Koprowski Angelika |
| 分类号 |
H01L23/532;H01L21/768 |
主分类号 |
H01L23/532 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device, comprising:
a semiconductor substrate comprising a first side, a second side opposite the first side, an active area, an outer rim, and an edge termination area arranged between the outer rim and the active area; and a metallization structure arranged on the first side of the semiconductor substrate and comprising at least a first metal layer comprised of a first metallic material and a second metal layer comprised of a second metallic material, wherein the first metallic material is electrochemically more stable than the second metallic material; wherein the first metal layer extends laterally further towards the outer rim than the second metal layer. |
| 地址 |
Neubiberg DE |
