发明名称 |
FORMATION METHOD FOR MICROPATTERN, MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING DEVICE, AND RECORDING MEDIUM |
摘要 |
A micropattern formation method comprises steps for: core pattern formation, which forms a core pattern of a predetermined linewidth in a substrate front side; sidewall formation, which forms a sidewall for the core pattern formed in the core pattern formation step; and core pattern removal, which, subsequent to the sidewall formation step, using etching gas, removes the core pattern in a state of leaving the sidewall. The micropattern formation method is configured so that, in the core pattern removal step, in parallel with the removal of the core pattern, film deposited on the substrate rear side with the core pattern formation step is removed. |
申请公布号 |
WO2015060069(A1) |
申请公布日期 |
2015.04.30 |
申请号 |
WO2014JP75869 |
申请日期 |
2014.09.29 |
申请人 |
HITACHI KOKUSAI ELECTRIC INC. |
发明人 |
SHIMAMOTO, SATOSHI;KIKUCHI, TOSHIYUKI;YUGAMI, JIRO;HIROSE, YOSHIRO;WADA, YUICHI;KANAYAMA, KENJI;ASHIHARA, HIROSHI;KAMEDA, KENJI |
分类号 |
H01L21/3065;H01L21/027;H01L21/302 |
主分类号 |
H01L21/3065 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|