SELF-TERMINATING WRITE FOR A MEMORY CELL

摘要

A programmable impedance based memory device includes a programmable impedance element, read circuitry configured to determine a resistance of the programmable impedance element during a write operation; and, write circuitry configured to change the resistance of the programmable impedance element as part of performing the write operation, wherein the write circuitry is further configured to terminate the write operation based on the read circuitry detecting that the resistance of the programmable impedance element has passed a threshold value.

主权项

1. A method of performing write operations on a programmable impedance element based memory cell, the method comprising:
performing a write operation to change a resistance of a programmable impedance element; monitoring the resistance of the programmable impedance element during the write operation; in response to detecting that the resistance of the programmable impedance element has passed a threshold value, terminating the write operation.