| 发明名称 |
Phase Change Memory and Method of Fabricating Same |
| 摘要 |
A phase change memory (“PCM”) cell is provided in accordance with some embodiments. The PCM includes a spacer defining a reaction area; a phase change material layer disposed within the reaction area; a protection layer disposed over the phase change material layer and within the reaction area defined by the spacer; and a capping layer disposed over the protection layer and the spacer. |
| 申请公布号 |
US2015115215(A1) |
申请公布日期 |
2015.04.30 |
| 申请号 |
US201514590419 |
申请日期 |
2015.01.06 |
| 申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Tsao Tsun-Kai;Shen Ming-Huei;Liu Shih-Chang;Tu Yeur-Luen;Tsai Chia-Shiung |
| 分类号 |
H01L45/00 |
主分类号 |
H01L45/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A phase change memory (“PCM”) cell comprising:
a spacer defining a reaction area; a phase change material (PCM) layer disposed within the reaction area; a protection layer disposed over the PCM layer and within the reaction area defined by the spacer; and a capping layer disposed over the protection layer and the spacer. |
| 地址 |
Hsin-Chu TW |
