SOLID-STATE IMAGING DEVICE

摘要

In a solid-state imaging device, a photoelectric conversion unit, a transfer transistor, and at least a part of electric charge holding unit, among pixel constituent elements, are disposed on a first semiconductor substrate. An amplifying transistor, a signal processing circuit other than a reset transistor, and a plurality of common output lines, to which signals are read out from a plurality of pixels, are disposed on a second semiconductor substrate.

主权项

1. An imaging device comprising:
a first substrate; a second substrate; and a plurality of pixels, each including a photoelectric conversion unit disposed in the first substrate; and an analog-to-digital convertor disposed in the second substrate and configured to convert an analog signal based on a charge generated by the photoelectric conversion unit into a digital signal, wherein a first light shielding member is disposed between the first substrate and the second substrate, the first light shielding member being configured to reduce light transmitted through the photoelectric conversion unit to enter the analog-to-digital convertor.