| 摘要 |
A data storage system includes a semiconductor device and a controller. The semiconductor device is configured to repeat a read operation while changing a read voltage according to read voltages included in a read retry table until the read operation of a selected page passes in response to a command and an address. The controller is configured to generate a command and an address to control a read operation of the semiconductor device, and determine whether to perform a read operation with any one of the read voltages included in the read retry table when the semiconductor device performs the read operation based on data which has read as a result of performance of a specific number of times of read operations. |
