| 摘要 |
An interlayer insulating film is disposed above an image pickup region and a peripheral region of the semiconductor substrate. An opening is formed in the interlayer insulating film at a position overlying a photoelectric conversion portion. A waveguide member is formed above the image pickup region and the peripheral region of the semiconductor substrate. A part of the waveguide member, which part is disposed above the peripheral region, is removed such that the interlayer insulating film is exposed. |
