发明名称 DEPOSITION APPARATUS
摘要 An exemplary embodiment of the present invention provides a deposition apparatus including: a substrate support for supporting a substrate; a reaction chamber wall defining a reaction chamber and contacting the substrate support; a plurality of gas inlets connected to the reaction chamber wall; a remote plasma unit connected to at least one of the plurality of gas inlets; and a gas-supplying path connected to the plurality of gas inlets and defining a reaction region along with the substrate support. A plurality of gases passing through the plurality of gas inlets move along the gas-supplying path to be directly supplied onto the substrate without contacting other parts of the reactor.
申请公布号 US2015114295(A1) 申请公布日期 2015.04.30
申请号 US201414521588 申请日期 2014.10.23
申请人 ASM IP Holding B.V. 发明人 KIM Young Hoon;KIM Dae Youn;JUNG Dong Rak;CHOI Young Seok;LEE Sang Wook
分类号 C23C16/50;C23C16/455;C23C16/44;C23C16/46 主分类号 C23C16/50
代理机构 代理人
主权项 1. A deposition apparatus comprising: a substrate support for supporting a substrate; a reaction chamber wall defining a reaction chamber and contacting the substrate support; a plurality of gas inlets connected to the reaction chamber wall; a remote plasma unit connected to at least one of the plurality of gas inlets; and a gas-supplying path connected to the plurality of gas inlets and defining a reaction region along with the substrate support, wherein a plurality of gases passing through the plurality of gas inlets move along the gas-supplying path to be directly supplied to the substrate without contacting other parts of the reactor.
地址 Almere NL