| 摘要 |
[Problem] To provide a magnetoresistance effect element having thermal stability with a thermal stability exponent of 70 or more even in the case of a minute junction size, and a magnetic memory. [Solution] A magnetoresistance effect element is provided with a first magnetic layer (11) which constitutes a reference layer and has an invariable magnetization direction, a second magnetic layer (12) which constitutes a recording layer and has a variable magnetization direction, and a first nonmagnetic layer (13) which is disposed between the first magnetic layer (11) and the second magnetic layer (12) along the thickness direction of the first magnetic layer (11) and the second magnetic layer (12). The first magnetic layer (11) and/or the second magnetic layer (12) has a relationship of D<0.9t+13 between a junction size (D) (nm) that is the length of the longest straight line on an end face perpendicular to the thickness direction and a layer thickness (t) (nm), and the junction size is 30 nm or less. |
