发明名称 SOLAR CELL
摘要 Disclosed is a solar cell that comprises a substrate made of a semiconductor material, a first amorphous semiconductor layer placed on one region of the substrate and being of one conductivity type, a second amorphous semiconductor layer placed on another region of the substrate and being of another conductivity type, a substantially intrinsic i-type amorphous semiconductor layer provided above the first amorphous semiconductor layer, a third amorphous semiconductor layer provided on the i-type amorphous semiconductor layer and being of the other conductivity type, a first crystalline semiconductor layer placed between the first amorphous semiconductor layer and the i-type amorphous semiconductor layer and being of the one conductivity type, and a second crystalline semiconductor layer placed between the first crystalline semiconductor layer and the i-type amorphous semiconductor layer and being of the other conductivity type.
申请公布号 US2015114465(A1) 申请公布日期 2015.04.30
申请号 US201414582505 申请日期 2014.12.24
申请人 SANYO Electric Co., Ltd. 发明人 KIRIHATA Yutaka;NAKASU Masato;SOTANI Naoya
分类号 H01L31/075 主分类号 H01L31/075
代理机构 代理人
主权项 1. A solar cell comprising: a substrate; a first amorphous semiconductor layer arranged at a first region of the substrate and being of a first conductivity type; a second amorphous semiconductor layer arranged at a second region of the substrate and being of a second conductivity type; a substantially intrinsic i-type amorphous semiconductor layer provided above the first amorphous semiconductor layer; a third amorphous semiconductor layer provided on the i-type amorphous semiconductor layer and being of the second conductivity type; a first crystalline semiconductor layer arranged between the first amorphous semiconductor layer and the i-type amorphous semiconductor layer and being of the first conductivity type; and a second crystalline semiconductor layer arranged between the first crystalline semiconductor layer and the i-type amorphous semiconductor layer and being of the second conductivity type.
地址 Osaka JP