SEMICONDUCTOR DEVICE

摘要

A plurality of first wiring layers are arranged on a main surface of a substrate, a first insulating film is arranged on upper faces of the plurality of first wiring layers, a second insulating film is arranged on an upper face of the first insulating film, and a plurality of second wiring layers are arranged on the second insulating film. A metal resistive element layer is arranged just below at least one second wiring layer among the plurality of second wiring layers. A plurality of conductive layers extend from the plurality of second wiring layers respectively to the metal resistive element layer in a Z direction perpendicular to the main surface. The metal resistive element layer includes a metal wiring layer. At least one part of a side face of at least one conductive layer among the plurality of conductive layers is connected to the metal wiring layer.

主权项

1. A semiconductor device comprising:
a plurality of first wiring layers arranged on a main surface of a substrate; a first insulating film arranged so as to cover upper faces of said plurality of first wiring layers; a second insulating film arranged so as to cover an upper face of said first insulating film; a plurality of second wiring layers arranged on said second insulating film; a metal resistive element layer arranged on the upper face of said first insulating film so as to be positioned just below at least one said second wiring layer among said plurality of second wiring layers; and a plurality of conductive layers extending from said plurality of second wiring layers, respectively to said metal resistive element layer in a direction perpendicular to said main surface, wherein said metal resistive element layer includes a metal wiring layer, and at least one part of a side face of at least one said conductive layer among said plurality of conductive layers is connected to said metal wiring layer.