| 摘要 |
A device includes a substrate (10) and a III-nitride structure (15) grown on the substrate, the III-nitride structure comprising a light emitting layer (16) disposed between an n-type region (14) and a p-type region (18). The substrate is a RAO3 (MO)n where R is one of a trivalent cation: Sc, In, Y and a lanthanide; A is one of a trivalent cation: Fe (III), Ga and Al; M is one for a divalent cation: Mg, Mn, Fe (II), Co, Cu, Zn and Cd; and n is an integer ≧1. The substrate has an inplane lattice constant asubstrate. At lease one III-nitride layer in the III-nitride structure has a bulk lattice constant alayer such that [(|asubstrate−alayer|)/asubstrate]*100% is no more than 1%. |
| 主权项 |
1. A method comprising:
growing a III-nitride structure grown on a substrate, the III-nitride structure comprising a light emitting layer disposed between an n-type region and a p-type region, wherein the III-nitride structure comprises a region including only ternary, quaternary, and/or quinary III-nitride layers and the region including only ternary, quaternary, and/or quinary III-nitride layers is thicker than 2 μm; attaching the III-nitride structure to a mount; and removing the substrate, wherein: the substrate is RAO3(MO)n, where R is one of a trivalent cation, Sc, In, Y, and a lanthanide; A is one of a trivalent cation, Fe (III), Ga, and Al; M is one of a divalent cation, Mg, Mn, Fe (II), Co, Cu, Zn and Cd; and n is an integer ≧1; the substrate has an in-plane lattice constant asubstrate; at least one III-nitride layer in the III-nitride structure has a bulk lattice constant alayer; and [(|asubstrate−alayer|)/asubstrate]*100% is no more than 1%. |
