| 摘要 |
A semiconductor device includes a substrate, a buffer layer, and a compound semiconductor layer. The buffer layer is configured by laminating two or more pairs of a first buffer and a second buffer. The first buffer is formed by laminating one or more pairs of an AlN layer and a GaN layer. The second buffer is formed of a GaN layer. A total Al composition of a pair of the first buffer and the second buffer on the compound semiconductor layer side is higher than that of a pair of the first buffer and the second buffer on the substrate side. |
