发明名称 ACCUMULATION TYPE MOSFET
摘要 <p>PROBLEM TO BE SOLVED: To provide an accumulation type MOSFET high in a ratio of a drain current in an OFF state (zero V) and an ON state (power supply voltage) of a MOSFET, and also high in current drive capability during an ON state.SOLUTION: The problem can be solved by providing a tunnel electron emission part and a thermionic emission part at a source region part in an accumulation type MOSFET.</p>
申请公布号 JP2015084436(A) 申请公布日期 2015.04.30
申请号 JP20140248401 申请日期 2014.12.08
申请人 TOHOKU UNIV 发明人 TERAMOTO AKINOBU
分类号 H01L29/786;H01L29/66 主分类号 H01L29/786
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