摘要 |
<p>PROBLEM TO BE SOLVED: To provide an accumulation type MOSFET high in a ratio of a drain current in an OFF state (zero V) and an ON state (power supply voltage) of a MOSFET, and also high in current drive capability during an ON state.SOLUTION: The problem can be solved by providing a tunnel electron emission part and a thermionic emission part at a source region part in an accumulation type MOSFET.</p> |