发明名称 均一なパターンを有する磁気ランダムアクセスメモリ(MRAM)の配置
摘要 <p>A large scale memory array includes a uniform pattern of uniformly sized dummy bit cells and active bit cells. Sub-arrays within the large scale memory array are separated by the dummy bit cells. Signal distribution circuitry is formed with a width or height corresponding to the width or height of the dummy bit cells so that the signal distribution circuitry occupies the same footprint as the dummy bit cells without disrupting the uniform pattern across the large scale array. Edge dummy cells of a similar size or larger than the standard size bit cells may be placed around the edge of the large scale array to further reduce pattern loading affects.</p>
申请公布号 JP5710771(B2) 申请公布日期 2015.04.30
申请号 JP20130533007 申请日期 2011.10.10
申请人 发明人
分类号 H01L21/8246;H01L27/105;H01L43/08 主分类号 H01L21/8246
代理机构 代理人
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