发明名称 Semiconductor Device Having a Locally Reinforced Metallization Structure and Method for Manufacturing Thereof
摘要 A method for forming a semiconductor device includes providing a semiconductor substrate having a first area and a second area. A first metal layer structure is formed which includes at least a first metal portion in the first area and a second metal portion in the second area. A plating mask is formed on the first metal layer structure to cover the second metal portion, and a second metal layer structure is plated on and in ohmic contact with the first metal portion of the first metal layer structure.
申请公布号 US2015115391(A1) 申请公布日期 2015.04.30
申请号 US201314068374 申请日期 2013.10.31
申请人 Infineon Technologies Austria AG 发明人 Roth Roman;Umbach Frank
分类号 H01L23/367;H01L29/06;H01L29/40;H01L21/283 主分类号 H01L23/367
代理机构 代理人
主权项 1. A method for manufacturing a semiconductor device, the method comprising: providing a semiconductor substrate comprising an active area formed in the semiconductor substrate and an edge termination area formed in the semiconductor substrate and laterally surrounding the active area; forming a first metal layer structure on a first side of the semiconductor substrate, wherein the first metal layer structure comprises at least a lower metal layer extending from the active area to the edge termination area and at least an upper metal layer comprising at least a first metal portion in the active area and at least a second metal portion in the edge termination area; forming a plating mask on the first metal layer structure to cover the second metal portion while leaving at least a portion of the first metal portion uncovered; plating a second metal layer structure at least on and in ohmic contact with the first metal portion, wherein the plating mask covers the second metal portion during plating of the second metal layer structure; and etching the lower metal layer of the first metal layer structure using at least the upper metal layer as etching mask after plating the second metal layer structure; wherein the second metal layer structure, the first metal portion of the upper metal layer and a portion of the lower metal layer form together a common metallization structure in the active area of the semiconductor device.
地址 Villach AT