SOLID-STATE IMAGING DEVICE, METHOD FOR MANUFACTURING SOLID-STATE IMAGING DEVICE, AND IMAGING APPARATUS

摘要

A solid-state imaging device includes, in a semiconductor substrate, a pixel portion provided with a photoelectric conversion portion, which photoelectrically converts incident light to obtain an electric signal and a peripheral circuit portion disposed on the periphery of the pixel portion, wherein a gate insulating film of aMOS transistor in the peripheral circuit portion is composed of a silicon oxynitride film, a gate insulating film of aMOS transistor in the pixel portion is composed of a silicon oxynitride film, and an oxide film is disposed just above the photoelectric conversion portion in the pixel portion.

主权项

1. A solid-state imaging device comprising:
a pixel portion configured to have a plurality of photoelectric conversion elements; a peripheral circuit portion configured to be located outside of a periphery of the pixel portion; and wherein the peripheral circuit portion includes one or more first transistors and a first gate insulating film, the pixel portion includes a transfer transistor and one or more second transistors and a second gate insulating film, and a film disposed over the photoelectric conversion elements, the film including at least two layers abutting each other, and composed of a same material; wherein at least one of the at least two layers is disposed directly above the pixel portion and abuts the second gate insulating film.