DUAL EPITAXIAL PROCESS FOR A FINFET DEVICE

摘要

A method includes forming a first fin and a second fin extending above a semiconductor substrate, with a shallow trench isolation (STI) region between them. A space is defined between the first and second fins above a top surface of the STI region. A first height is defined between the top surface of the STI region and top surfaces of the first and second fins. A flowable dielectric material is deposited into the space. The dielectric material has a top surface above the top surface of the STI region, so as to define a second height between the top surface of the dielectric material and the top surfaces of the first and second fins. The second height is less than the first height. First and second fin extensions are epitaxially formed above the dielectric, on the first and second fins, respectively, after the depositing step.

主权项

1. A finFET comprising:
a first fin and a second fin extending above a semiconductor substrate, with a shallow trench isolation (STI) region therebetween, and a space defined between the first and second fins above a top surface of the STI region, the fins having a first longitudinal direction; a first gate electrode over the first fin, the first gate electrode having a second longitudinal direction normal to the first longitudinal direction; a flowable dielectric material layer on the top surface of the STI region, so as to define a step height between the top surface of the dielectric material and the top surfaces of the first and second fins that is smaller than a distance between the top surface of the STI region and the top surfaces of the first and second fins; and first and second epitaxial SiGe lateral fin extensions above the dielectric, on the first and second fins, respectively, the fin extensions extending laterally beyond side edges of the fin below a top surface of the dielectric material.