发明名称 |
SILICON NITRIDE SUBSTRATE AND SILICON NITRIDE CIRCUIT SUBSTRATE USING SAME |
摘要 |
The invention is characterized in that, in a silicon nitride substrate comprising a grain boundary phase with silicon nitride crystal particles and having a heat conductivity of 50W/m∙K or greater, the sectional structure of the silicon nitride substrate has a ratio (T2/T1) of 0.01 to 0.30 between the thickness T1 of the silicon nitride substrate and the total length T2 of the grain boundary phase in the thickness direction, and a variation in the dielectric strength of 15% or less from the mean value, as measured by the four terminal method, in which electrodes are brought into contact with the front and the back of the substrate. In addition, a dielectric strength mean value of 15 kv/mm or greater is desirable. According to this constitution, the silicon nitride substrate having a small dielectric strength variation, and the silicon nitride circuit substrate using the same, are obtained. |
申请公布号 |
WO2015060274(A1) |
申请公布日期 |
2015.04.30 |
申请号 |
WO2014JP77889 |
申请日期 |
2014.10.21 |
申请人 |
KABUSHIKI KAISHA TOSHIBA;TOSHIBA MATERIALS CO., LTD. |
发明人 |
NAKAYAMA, NORITAKA;AOKI, KATSUYUKI;SANO, TAKASHI |
分类号 |
C04B35/584;H01L23/15;H05K1/03 |
主分类号 |
C04B35/584 |
代理机构 |
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代理人 |
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地址 |
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