发明名称 |
METHOD OF MAKING SOURCE/DRAIN CONTACTS BY SPUTTERING A DOPED TARGET |
摘要 |
<p>A method of depositing a contact layer material includes sputtering a target including a metal and a dopant. The contact layer material is conductive and may be used in a transistor device to connect a conductive region, such as a source region or a drain region of metal-oxide semiconductor field effect transistor, to a contact plug. The contact plug is used to connect the source/drain region formed in a semiconducting substrate to metal wiring layers formed above the gate level of a semiconductor device. The resulting contact layer may be a metal silicide including the dopant. In some embodiments, the sputtered metal may be nickel and the dopant may be phosphorous and the resulting contact layer a nickel silicide doped with phosphorous. Embodiments described, in general, can provide reduced contact resistance and thus improved performance in semiconductor devices.</p> |
申请公布号 |
WO2015060993(A1) |
申请公布日期 |
2015.04.30 |
申请号 |
WO2014US57849 |
申请日期 |
2014.09.26 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
LEI, JIANXIN;RAMALINGAM, JOTHILINGAM;NI, CHI-NUNG |
分类号 |
H01L21/203;H01L21/265;H01L21/335 |
主分类号 |
H01L21/203 |
代理机构 |
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代理人 |
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地址 |
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