SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device in which the area occupied by a transistor and a capacitative element is small.SOLUTION: A semiconductor device comprises: a semiconductor substrate; a first transistor using the semiconductor substrate; a second transistor having a region which at least partially overlaps the first transistor; and a capacitative element. The second transistor comprises: a semiconductor; a first conductive film and a second conductive film that have a region in contact with an upper surface and a side surface of the semiconductor; a first insulating film that has a region in contact with the upper surface and the side surface of the semiconductor; and a third conductive film that has a region facing the upper surface and the side surface of the semiconductor via the first insulating film. The capacitative element is in contact with the first conductive film and comprises: a second insulating film that has an opening reaching the first conductive film; a fourth conductive film that has a region in contact with a bottom surface and a side surface of the opening; a third insulating film that has a region facing the bottom surface and the side surface of the opening via the fourth conductive film; and a fifth conductive film that has a region facing the fourth conductive film via the third insulating film.