| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a silicon epitaxial wafer that effectively keeps misfit dislocation from being generated when growing a silicon epitaxial layer on a silicon monocrystalline substrate having resistivity of 20[mΩcm] or less, which is liable to cause misfit dislocation, to provide a method of manufacturing the same, and to provide an epitaxially growing silicon monocrystalline substrate. <P>SOLUTION: The silicon epitaxial wafer has a silicon epitaxial layer formed on a silicon monocrystalline substrate, wherein the silicon monocrystalline substrate is one to which at least both boron and gallium are added as a doping agent, and its resistivity is≤20 [mΩcm]. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
