| 摘要 |
<p>There are provided a high-quality semiconductor device having stable characteristics and a method for manufacturing such a semiconductor device. The semiconductor device includes: a substrate (1) having a main surface; and a silicon carbide layer (2-5) formed on the main surface of the substrate (1) and including a side surface inclined relative to the main surface. The side surface substantially includes a {03-3-8} plane. The side surface includes a channel region.</p> |
