MEMORY DEVICES

摘要

A method and a system for memory cell programming and erasing with refreshing operation are disclosed. The system includes a selecting module, a processing module and a refresh module. In the method, at first, a target memory cell from a plurality of memory cells in a memory device is selected. Thereafter, the target memory cell belonging to a line of the matrix is programmed or erased by applying a selecting voltage on the target memory cell and a location-related memory cell belonging to the line of the matrix. Then, a refreshing operation to refresh the location-related cell is performed.

主权项

1. A method, comprising:
selecting a target memory cell from a plurality of memory cells of a matrix in a memory device; programming or erasing the target memory cell belonging to a line of the matrix by applying a selecting voltage to the target memory cell and a first location-related cell belonging to the line of the matrix; and performing a first refreshing operation to refresh the first location-related memory cell.