CONNECTING STORAGE GATE MEMORY

摘要

Technologies are generally related to a connecting storage gate memory device, system, and method of manufacture.

主权项

1. A memory device comprising:
a substrate; a memory transistor comprising:
a gate stack comprising:
a memory gate dielectric layer positioned over the substrate;a connecting storage gate layer positioned over the memory gate dielectric layer;a control gate dielectric layer positioned over the connecting storage gate layer;a gate electrode layer positioned over the control gate dielectric layer; andan assist transistor comprising:
a gate stack formed on the substrate; andsource/drain regions located on opposite sides of gate stack, wherein one of the source/drain regions is connected to the connecting storage gate of the memory transistor.