| 发明名称 |
METHOD FOR PROCESSING WAFER |
| 摘要 |
A method for processing a wafer including a plurality of chips is provided. The method may include: forming a trench in the wafer between the plurality of chips; forming a diffusion barrier layer at least over the sidewalls of the trench; forming encapsulation material over the plurality of chips and in the trench; and singularizing the plurality of chips from a side opposite the encapsulation material. |
| 申请公布号 |
US2015115448(A1) |
申请公布日期 |
2015.04.30 |
| 申请号 |
US201314066777 |
申请日期 |
2013.10.30 |
| 申请人 |
Infineon Technologies AG |
发明人 |
Maier Hubert |
| 分类号 |
H01L21/82;H01L21/768;H01L21/306;H01L23/31 |
主分类号 |
H01L21/82 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for processing a wafer comprising a plurality of chips, the method comprising:
forming a trench in the wafer between the plurality of chips; forming a diffusion barrier layer at least over the sidewalls of the trench; forming encapsulation material over the plurality of chips and in the trench; and singularizing the plurality of chips from a side opposite the encapsulation material. |
| 地址 |
Neubiberg DE |
