| 发明名称 |
SEMICONDUCTOR DEVICE |
| 摘要 |
A semiconductor device includes multilayer chips in which a first semiconductor chip and a second semiconductor chip are bonded together. A first electrode pad is formed on a principal surface of the first semiconductor chip, and a first bump is formed on the first electrode pad. A second bump is formed on the principal surface of the second semiconductor chip such that the second bump is bonded to the first bump. The first electrode pad has an opening, and the opening and an entire peripheral portion of the opening form a stepped shape form a stepped shape. The first bump has a recessed shape that is recessed at a center thereof and covers the stepped shape. |
| 申请公布号 |
US2015115440(A1) |
申请公布日期 |
2015.04.30 |
| 申请号 |
US201514592576 |
申请日期 |
2015.01.08 |
| 申请人 |
Panasonic Intellectual Property Management Co., Ltd. |
发明人 |
HIGUCHI Yuichi |
| 分类号 |
H01L25/065;H01L23/48;H01L23/00 |
主分类号 |
H01L25/065 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a multilayer chip including a first semiconductor chip and a second semiconductor chip that are bonded together, wherein a first electrode pad is provided on a principal surface of the first semiconductor chip, a first bump is provided on the first electrode pad, a second bump is provided on a principal surface of the second semiconductor chip and is bonded to the first bump, the first electrode pad has an opening, the opening and an entire peripheral portion of the opening form a stepped shape, and the first bump has a recessed shape that is recessed at a center thereof and covers the stepped shape. |
| 地址 |
Osaka JP |
