| 发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME |
| 摘要 |
Provided are a semiconductor device and a method of fabricating the same. The semiconductor device may include a plurality of unit cells provided on a semiconductor substrate. Each of the unit cells may include a buried insulating pattern buried in the semiconductor substrate, a first active pattern provided on the buried insulating pattern, and a second active pattern provided on the buried insulating pattern and spaced apart from the first active pattern. The buried insulating pattern may define a unit cell region, in which each of the unit cells may be disposed. |
| 申请公布号 |
US2015115368(A1) |
申请公布日期 |
2015.04.30 |
| 申请号 |
US201414330777 |
申请日期 |
2014.07.14 |
| 申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
KIM Ki-Chul;SHIN Joonghan;KUH Bongjin;KIM Taegon;CHOI Hanmei |
| 分类号 |
H01L29/06;H01L21/8238;H01L27/092 |
主分类号 |
H01L29/06 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a plurality of unit cells provided on a semiconductor substrate, each of the unit cells comprising:
a buried insulating pattern buried in the semiconductor substrate;a first active pattern provided on the buried insulating pattern; anda second active pattern provided on the buried insulating pattern and spaced apart from the first active pattern,wherein the buried insulating pattern defines a unit cell region, in which each of the unit cells is disposed. |
| 地址 |
Suwon-si KR |
