发明名称 |
SUPERJUNCTION DEVICE AND SEMICONDUCTOR STRUCTURE COMPRISING THE SAME |
摘要 |
The present disclosure relates to a superjunction device and a semiconductor structure having the same. The superjunction device includes a body region of a second conduction type, a drain region of a first conduction type, a drift region located between said body region and said drain region. The drift region includes first regions of a first conduction type and second regions of a second conduction type arranged alternately along a direction being perpendicular to the direction from the body region to the drain region, and a plurality of trench gate structures, each of them comprising a trench extending into said drift region from an upper surface of said body region and a gate electrode in said trench surrounded by a first dielectric layer filling said trench, and a source region of a first conduction type embedded into said body region. There is no source region along at least 10% of the total interface length between the first dielectric layer and the body region. |
申请公布号 |
US2015115355(A1) |
申请公布日期 |
2015.04.30 |
申请号 |
US201414524193 |
申请日期 |
2014.10.27 |
申请人 |
Infineon Technologies Austria AG |
发明人 |
Hirler Franz;Mauder Anton |
分类号 |
H01L29/78;H01L29/10;H01L29/423 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
1. A superjunction device, which comprises:
a drain region of a first conduction type; a body region of a second conduction type; a drift region located between said body region and said drain region, the drift region comprises first regions of a first conduction type and second regions of a second conduction type arranged alternately along a direction being perpendicular to the direction from the body region to the drain region; a plurality of trench gate structures, each of them comprising a trench extending into said drift region from an upper surface of said body region and a gate electrode in said trench surrounded by a first dielectric layer filling said trench; and a source region of a first conduction type embedded into said body region; wherein there is no source region along at least 10% of the total interface length between the first dielectric layer and the body region. |
地址 |
Villach AT |