| 发明名称 |
SEMICONDUCTOR PHOTO-DETECTING DEVICE |
| 摘要 |
An ultraviolet (UV) photo-detecting device, including: a first nitride layer; a secondary light absorption layer disposed on the first nitride layer; a primary light absorption layer disposed on the secondary light absorption layer; and a Schottky junction layer disposed on the primary light absorption layer. The secondary light absorption layer includes a nitride layer having lower band-gap energy than the primary light absorption layer. |
| 申请公布号 |
US2015115318(A1) |
申请公布日期 |
2015.04.30 |
| 申请号 |
US201414584732 |
申请日期 |
2014.12.29 |
| 申请人 |
Seoul Viosys Co., Ltd. |
发明人 |
PARK Ki Yon;KIM Hwa Mok;LEE Kyu Ho;LEE Sung Hyun;KIM Hyung Kyu |
| 分类号 |
H01L31/0304;H01L31/11 |
主分类号 |
H01L31/0304 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An ultraviolet (UV) photo-detecting device, comprising:
a first nitride layer; a secondary light absorption layer disposed on the first nitride layer; a primary light absorption layer disposed on the secondary light absorption layer; and a Schottky junction layer disposed on the primary light absorption layer, wherein the secondary light absorption layer comprises a nitride layer having lower band-gap energy than the primary light absorption layer. |
| 地址 |
Ansan-si KR |
