| 摘要 |
Disclosed is a bipolar transistor capable of improving current amplification factor while improving breakdown voltage. A bipolar transistor (10) comprises a p-type emitter region (40), a p-type collector region (20), an n-type base region (30) provided between the emitter region (40) and the collector region (20), a p-type first submerged region (50) provided below the base region (30), and an n-type region (18) of lower n-type impurity concentration than the base region (30) and adjacent to the emitter region (40), the collector region (20), the base region (30), and the first submerged region (50), said n-type region (18) separating the emitter region (40) from the base region (30) and the first submerged region (50), and separating the collector region (20) from the base region (30) and the first submerged region (50). A portion of the base region (30) projects more to the side of the collector region (20) than the first submerged region (50). |
