| 摘要 |
PROBLEM TO BE SOLVED: To provide CaF-MgFbinary sintered compact suitable for components required of high plasma resistance, high mechanical strength and impact resistance in an apparatus for producing a silicon semiconductor and compound semiconductor, etc.SOLUTION: This binary sintered compact comprises CaF-MgFsintered compact including 1.5-10 wt.% of MgF, and has a dense structure that the bulk density of the sintered compact is 3.00 g/cmor more. |
