发明名称 SEMICONDUCTOR DEVICE INCLUDING REPEATER CIRCUIT FOR MAIN DATA LINE
摘要 A semiconductor memory disclosed in this disclosure includes first and second memory cell arrays, a first main data line that transfers the read data read from the first memory cell array, a second main data line that transfers the read data read from the second memory cell array, a main amplifier coupled to the second main data line, and a repeater circuit coupled to the first main data line and the second main data line.
申请公布号 US2015120997(A1) 申请公布日期 2015.04.30
申请号 US201414523704 申请日期 2014.10.24
申请人 Micron Technology, Inc. 发明人 MITSUBORI SHINGO;Fujisawa Hiroki
分类号 G11C7/10 主分类号 G11C7/10
代理机构 代理人
主权项 1. A semiconductor device comprising: first and second memory cell arrays, each of first and second memory cell arrays including a plurality of memory cells; a first main data line arranged above the first memory cell array to transfer data read from the first memory cell array; a second main data line arranged above the second memory cell array to transfer data read from the second memory cell array; a main amplifier coupled to the second main data line to amplify the data on the second main data line; and a repeater circuit coupled to the first and second main data lines to transfer data on the first main data line to the second main date line.
地址 Boise ID US