发明名称 |
SEMICONDUCTOR DEVICE INCLUDING REPEATER CIRCUIT FOR MAIN DATA LINE |
摘要 |
A semiconductor memory disclosed in this disclosure includes first and second memory cell arrays, a first main data line that transfers the read data read from the first memory cell array, a second main data line that transfers the read data read from the second memory cell array, a main amplifier coupled to the second main data line, and a repeater circuit coupled to the first main data line and the second main data line. |
申请公布号 |
US2015120997(A1) |
申请公布日期 |
2015.04.30 |
申请号 |
US201414523704 |
申请日期 |
2014.10.24 |
申请人 |
Micron Technology, Inc. |
发明人 |
MITSUBORI SHINGO;Fujisawa Hiroki |
分类号 |
G11C7/10 |
主分类号 |
G11C7/10 |
代理机构 |
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代理人 |
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主权项 |
1. A semiconductor device comprising:
first and second memory cell arrays, each of first and second memory cell arrays including a plurality of memory cells; a first main data line arranged above the first memory cell array to transfer data read from the first memory cell array; a second main data line arranged above the second memory cell array to transfer data read from the second memory cell array; a main amplifier coupled to the second main data line to amplify the data on the second main data line; and a repeater circuit coupled to the first and second main data lines to transfer data on the first main data line to the second main date line. |
地址 |
Boise ID US |