METHOD OF FORMING PATTERN OF SEMICONDUCTOR DEVICE

摘要

A method of forming a pattern of a semiconductor device includes providing a substrate, forming a photoresist layer by coating a resist composition including an acid generator and a first resin, the first resin having an acid-labile group, exposing the photoresist layer, forming a photoresist pattern by negatively developing the photoresist layer using a developing solution including an organic solvent, coating a capping composition including a second resin and the organic solvent on the substrate having the photoresist pattern formed thereon, and attaching a capping layer on upper and side surfaces of the photoresist pattern, by baking the capping composition and developing the capping composition using the developing solution including the organic solvent.

主权项

1. A method of forming a pattern of a semiconductor device, the method comprising:
providing a substrate; forming a photoresist layer by coating a resist composition including an acid generator and a first resin, the first resin having an acid-labile group; exposing the photoresist layer; forming a photoresist pattern by negatively developing the photoresist layer using a developing solution including an organic solvent; coating a capping composition including a second resin and the organic solvent on the substrate having the photoresist pattern formed thereon; and attaching a capping layer on upper and side surfaces of the photoresist pattern, by baking the capping composition and developing the capping composition using the developing solution including the organic solvent.