| 发明名称 |
Insulation Structure Formed in a Semiconductor Substrate and Method for Forming an Insulation Structure |
| 摘要 |
A method for forming an insulation structure in a semiconductor body includes forming a trench extending from a first surface into a semiconductor body, the trench having a first width in a horizontal direction of the semiconductor body, and forming a void spaced apart from the first surface in a vertical direction of the semiconductor body, the void having a second width in a horizontal direction that is greater than the first width, wherein the trench and the void are arranged adjacent to each other in a vertical direction. |
| 申请公布号 |
US2015115396(A1) |
申请公布日期 |
2015.04.30 |
| 申请号 |
US201314068378 |
申请日期 |
2013.10.31 |
| 申请人 |
Infineon Technologies Austria AG |
发明人 |
Lemke Marko;Weis Rolf;Rudolf Ralf |
| 分类号 |
H01L21/762;H01L29/06 |
主分类号 |
H01L21/762 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for forming an insulation structure, the method comprising:
forming a trench extending from a first surface into a semiconductor body, the trench having a first width in a horizontal direction of the semiconductor body; and forming a void spaced apart from the first surface in a vertical direction of the semiconductor body, the void having a second width in a horizontal direction that is greater than the first width, wherein the trench and the void are arranged adjacent to each other in the vertical direction. |
| 地址 |
Villach AT |
