SEMICONDUCTOR STRUCTURE WITH HIGH ENERGY DOPANT IMPLANTATION TECHNOLOGY

摘要

A semiconductor device has an epitaxial layer grown over a substrate, each having a first dopant type. A structure disposed within the epitaxial layer has multiple trenches, each of which has a gate and a source electrode disposed within a shield oxide matrix. Multiple mesas each isolate a pair of the trenches from each other. A body region with a second dopant type is disposed above the epitaxial layer and bridges each of the mesas. A region of elevated concentration of the first dopant type is implanted at a high energy level between the epitaxial layer and the body region, which reduces resistance spreading into a channel of the device. A source region having the first dopant type is disposed above the body region.