发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device with a transistor and a capacitive element having small occupied areas.SOLUTION: A semiconductor device comprises: a semiconductor; a first conductive film and a second conductive film having a region coming contact with an upper surface of the semiconductor, and a region coming contact with a side surface of the semiconductor; a first insulation film having a region coming contact with the semiconductor; a third conductive film having a region facing the semiconductor via the first insulation film; a second insulation film having a region coming contact with the first conductive film; and a fourth conductive film having a region coming contact with the first conductive film via the second insulation film on the region coming contact with the side surface of the semiconductor.
申请公布号 JP2015084417(A) 申请公布日期 2015.04.30
申请号 JP20140189636 申请日期 2014.09.18
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 YAMAZAKI SHUNPEI
分类号 H01L21/8244;G02F1/1368;H01L21/28;H01L21/336;H01L21/8234;H01L21/8242;H01L21/8247;H01L27/06;H01L27/08;H01L27/105;H01L27/108;H01L27/11;H01L27/115;H01L29/786;H01L29/788;H01L29/792 主分类号 H01L21/8244
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