发明名称 |
SEMICONDUCTOR DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device with a transistor and a capacitive element having small occupied areas.SOLUTION: A semiconductor device comprises: a semiconductor; a first conductive film and a second conductive film having a region coming contact with an upper surface of the semiconductor, and a region coming contact with a side surface of the semiconductor; a first insulation film having a region coming contact with the semiconductor; a third conductive film having a region facing the semiconductor via the first insulation film; a second insulation film having a region coming contact with the first conductive film; and a fourth conductive film having a region coming contact with the first conductive film via the second insulation film on the region coming contact with the side surface of the semiconductor. |
申请公布号 |
JP2015084417(A) |
申请公布日期 |
2015.04.30 |
申请号 |
JP20140189636 |
申请日期 |
2014.09.18 |
申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
YAMAZAKI SHUNPEI |
分类号 |
H01L21/8244;G02F1/1368;H01L21/28;H01L21/336;H01L21/8234;H01L21/8242;H01L21/8247;H01L27/06;H01L27/08;H01L27/105;H01L27/108;H01L27/11;H01L27/115;H01L29/786;H01L29/788;H01L29/792 |
主分类号 |
H01L21/8244 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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