| 发明名称 |
METHOD OF FABRICATING AN INTEGRATED CIRCUIT DEVICE |
| 摘要 |
A method of fabricating an integrated circuit device includes forming a first gate structure in a first region of a substrate and a second gate structure in a second region of the substrate. The method includes forming a protective layer overlying the first and the second gate structures. The method includes removing a portion of the protective layer over the second gate structure. The method includes forming features adjacent to the second gate structure. The method further includes forming a spacer over at least a portion of the features adjacent to the second gate structure, wherein the features separate the spacer from the substrate adjacent to the second gate structure. The method includes removing the second portion of the protective layer. Removing the second portion of the protective layer includes forming a protector over the second gate structure; and performing an etching process using a chemical comprising hydrofluoric acid (HF). |
| 申请公布号 |
US2015118807(A1) |
申请公布日期 |
2015.04.30 |
| 申请号 |
US201414552630 |
申请日期 |
2014.11.25 |
| 申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
YEH Ming-Hsi;LIN Hsien-Hsin;CHANG CHIEN Ying-Hsueh;PAI Yi-Fang;YANG Chi-Ming;LIN Chin-Hsiang |
| 分类号 |
H01L29/66 |
主分类号 |
H01L29/66 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of fabricating an integrated circuit device, the method comprising:
forming a first gate structure in a first region of a substrate and a second gate structure in a second region of the substrate; forming a protective layer overlying the first and the second gate structures; removing a first portion of the protective layer over the second gate structure, but leaving a second portion of the protective layer over the first gate structure; forming features adjacent to opposite portions of the second gate structure by an epitaxial (epi) growth process; forming a spacer over at least a portion of the features adjacent to opposite portions of the second gate structure, wherein the features separate the spacer from the substrate adjacent to the opposite portions of the second gate structure; and removing the second portion of the protective layer, wherein the step of removing comprises:
forming a protector over the second gate structure; andperforming an etching process using a chemical comprising hydrofluoric acid (HF). |
| 地址 |
Hsinchu TW |
