Nano-structure semiconductor light emitting device

摘要

A method of manufacturing a light emitting device having a plurality of nano-light emitting structures is provided. The method comprises depositing a first conductivity-type semiconductor material on a substrate to form a base layer. A mask having a plurality of openings is formed on the base layer. The first conductivity-type nitride semiconductor material is deposited in the openings of the mask to form a plurality of nanocores having a main portion bounded by the mask and an exposed tip portion. A current blocking layer is deposited on the tip portion of the nanocores. A portion of the mask is removed to expose the main portion of the nanocore. An active material layer is deposited on the plurality of nanocores. A second conductivity-type nitride semiconductor layer is deposited on the active material layer.

主权项

1. A method of manufacturing a light emitting device having a plurality of nano-light emitting structures, comprising:
depositing a first conductivity-type semiconductor material on a substrate to form a base layer; forming a mask having a plurality of openings on the base layer; depositing the first conductivity-type nitride semiconductor material in the openings of the mask to form a plurality of nanocores having a main portion bounded by the mask and an exposed tip portion; depositing a current blocking layer on the tip portion of the nanocores; removing a portion of the mask to expose the main portion of the nanocore; depositing an active material layer on the plurality of nanocores; and depositing a second conductivity-type nitride semiconductor layer on the active material layer.