发明名称 SPIN TRANSPORT SENSOR
摘要 The implementations disclosed herein provide for a spin transport sensor including a synthetic antiferromagnet (SAF) adjacent a shield element. The SAF extends to an air-bearing surface (ABS) and provides a current path from a current source to an ABS-region of a spin conductor layer. Spin current diffuses from the spin conductor layer to an adjacent free layer, which generates a measurable electrical voltage in a free layer of the spin transport sensor. The SAF serves as both a magnetic shield and a spin injector to the spin conductor layer.
申请公布号 US2015116870(A1) 申请公布日期 2015.04.30
申请号 US201314069015 申请日期 2013.10.31
申请人 Seagate Technology LLC 发明人 Singleton Eric Walter;Ge Zhiguo
分类号 G11B5/39 主分类号 G11B5/39
代理机构 代理人
主权项 1. A magnetoresistive (MR) sensor comprising: a synthetic antiferromagnet (SAF) that extends to an air bearing surface (ABS) of the MR sensor and provides a current path for a spin-polarized current through an ABS-region of a spin conductor layer.
地址 Cupertino CA US