发明名称 |
SPIN TRANSPORT SENSOR |
摘要 |
The implementations disclosed herein provide for a spin transport sensor including a synthetic antiferromagnet (SAF) adjacent a shield element. The SAF extends to an air-bearing surface (ABS) and provides a current path from a current source to an ABS-region of a spin conductor layer. Spin current diffuses from the spin conductor layer to an adjacent free layer, which generates a measurable electrical voltage in a free layer of the spin transport sensor. The SAF serves as both a magnetic shield and a spin injector to the spin conductor layer. |
申请公布号 |
US2015116870(A1) |
申请公布日期 |
2015.04.30 |
申请号 |
US201314069015 |
申请日期 |
2013.10.31 |
申请人 |
Seagate Technology LLC |
发明人 |
Singleton Eric Walter;Ge Zhiguo |
分类号 |
G11B5/39 |
主分类号 |
G11B5/39 |
代理机构 |
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代理人 |
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主权项 |
1. A magnetoresistive (MR) sensor comprising:
a synthetic antiferromagnet (SAF) that extends to an air bearing surface (ABS) of the MR sensor and provides a current path for a spin-polarized current through an ABS-region of a spin conductor layer. |
地址 |
Cupertino CA US |