发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To improve electrical characteristics of a protective circuit to reduce occupying area, and to enhance reliability of a display device with a thin-film transistor.SOLUTION: In a protective circuit, first wiring formed on a substrate, second wiring crossed with the first wiring and an insulating film for insulating the first wiring and the second wiring are formed, and one of the first wiring or the second wiring is projected to the other side of the first wiring or the second wiring at a crossing section of the first wiring and the second wiring. In the insulating film for insulating the first wiring and the second wiring, a recessed section or an isolating section is formed at the crossing section of the first wiring and the second wiring. In the protective circuit, one of the first wiring or the second wiring is projected to the other side of the first wiring or the second wiring in a region of the crossing section.
申请公布号 JP2015084452(A) 申请公布日期 2015.04.30
申请号 JP20150004980 申请日期 2015.01.14
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 HOSOYA KUNIO;FUJIKAWA SAISHI;SUZUKI YUKIE
分类号 H01L29/786;G02F1/1345;H01L21/336;H01L21/822;H01L27/04 主分类号 H01L29/786
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