发明名称 プラズマ処理システムにおけるクリーニングまたはコンディショニングプロセスのエンドポイント決定方法及び装置
摘要 <p>A method of determining an endpoint of a process by measuring a thickness of a layer, the layer being deposited on the surface by a prior process is disclosed. The method includes providing a sensor that is coplanar with the surface, wherein the sensor is configured to measure the thickness. The method also includes exposing the plasma chamber to a plasma, wherein the thickness is changed by the exposing, and determining the thickness as a function of time. The method further includes ascertaining a steady state condition in the thickness, the steady state condition being characterized by a substantially stable measurement of the thickness, a start of the steady state condition representing the endpoint.</p>
申请公布号 JP5709912(B2) 申请公布日期 2015.04.30
申请号 JP20130024196 申请日期 2013.02.12
申请人 发明人
分类号 H01L21/3065 主分类号 H01L21/3065
代理机构 代理人
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