SHIELDING DESIGN FOR METAL GAP FILL

摘要

The present disclosure is directed to a physical vapor deposition system configured to heat a semiconductor substrate or wafer. In some embodiments the disclosed physical vapor deposition system comprises at least one heat source having one or more lamp modules for heating of the substrate. The lamp modules may be separated from the substrate by a shielding device. In some embodiments, the shielding device comprises a one-piece device or a two piece device. The disclosed physical vapor deposition system can heat the semiconductor substrate, reflowing a metal film deposited thereon without the necessity for separate chambers, thereby decreasing process time, requiring less thermal budget, and decreasing substrate damage.

主权项

1. A method for heating a substrate in a physical vapor deposition process chamber, comprising:
supporting a substrate on a pedestal housed within a process chamber; forming target atoms on a surface of the substrate; and heating the surface of the substrate using a radiant heat source during or after forming the target atoms on the surface.