| 发明名称 |
Elevated Photodiodes with Crosstalk Isolation |
| 摘要 |
A device includes a plurality of isolation spacers, and a plurality of bottom electrodes, wherein adjacent ones of the plurality of bottom electrodes are insulated from each other by respective ones of the plurality of isolation spacers. A plurality of photoelectrical conversion regions overlaps the plurality of bottom electrodes, wherein adjacent ones of the plurality of photoelectrical conversion regions are insulated from each other by respective ones of the plurality of isolation spacers. A top electrode overlies the plurality of photoelectrical conversion regions and the plurality of isolation spacers. |
| 申请公布号 |
US2015118787(A1) |
申请公布日期 |
2015.04.30 |
| 申请号 |
US201414560676 |
申请日期 |
2014.12.04 |
| 申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Chu Yi-Shin;Lin Cheng-Tao;Wan Meng-Hsun;Chen Szu-Ying;Liu Jen-Cheng;Yaung Dun-Nian |
| 分类号 |
H01L27/146 |
主分类号 |
H01L27/146 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method comprising:
forming a plurality of isolation spacers separating a plurality of discrete bottom electrodes from each other, with edges of the plurality of discrete bottom electrodes contacting edges of the plurality of isolation spacers; filling spaces between the plurality of isolation spacers with a photoelectrical conversion material to form a plurality of photoelectrical conversion regions; and forming a continuous top electrode over the plurality of photoelectrical conversion regions. |
| 地址 |
Hsin-Chu TW |
